View MJW21192_4550141.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJW21192
DESCRIPTION *DC Current Gain *High Area of Safe Operation
APPLICATIONS *Designed for power audio output, or high power drivers in audio amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage
VALUE 150
UNIT
Collector Current-Continuous Collector Current-Pulsed
Base Current-Continuous
PD Tj Tstg
Total Power Dissipation (TC=25) Junction Temperature Storage Temperature
w w
PARAMETER
scs .i w
5 8 16 2 100 150 -65~150
150
.cn mi e
V V V A A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-C VALUE 0.65 UNIT /W
ThermalResistance Junction To Case
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(on) ICEs IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC=10mA; IB=0 IC=4A ;IB=0.4A
B
MJW21192
MIN 150
TYP.
MAX
UNIT V
1.0 2.0 2 10 10 100
V V V A A
IC=8A ;IB=1.6A
B
IC=4A ; VCE=2V VCE=250V; IE=0 VEB=5V; IC=0
IC=4A; VCE=2V
Current Gain-Bandwidth Product
w w
scs .i w
IC=8A; VCE=2V
IC=1A ;VCE=10V; ftest=1MHz
.cn mi e
15 5 4
MHz
isc Websitewww.iscsemi.cn
2

▲Up To Search▲

Price & Availability of MJW21192

	To Download MJW21192 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .